ASA50R130E PDF and Equivalents Search

 

ASA50R130E Specs and Replacement

Type Designator: ASA50R130E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 76 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V

Qg ⓘ - Total Gate Charge: 32.9 nC

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 79 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO220F

ASA50R130E substitution

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ASA50R130E datasheet

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ASA50R130E

ASA50R130E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.113 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.5 to 3.5 V Table 1 Key Performance Parameters Parameter Value Unit V 550 V DS ... See More ⇒

Detailed specifications: 2N7002KH , 2N7002KM , AS2310A , 2N7002EY , AS6004 , ADG120N080G2 , ADQ120N080G2 , ADW120N080G2 , 75N75 , ASA60R090EFD , ASA60R090EFDA , ASA60R150E , ASA60R170E , ASA60R210E , ASA60R280E , ASA60R330E , ASA65R120EFD .

History: ASA60R090EFD

Keywords - ASA50R130E MOSFET specs

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