ZXMN10A07Z
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMN10A07Z
Marking Code: 7N10
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 1.4
A
Qgⓘ - Total Gate Charge: 2.9
nC
Cossⓘ -
Output Capacitance: 138
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9
Ohm
Package: SOT893L
ZXMN10A07Z
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMN10A07Z
Datasheet (PDF)
..1. Size:186K diodes
zxmn10a07z.pdf
ZXMN10A07Z100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=100V : RDS(on)=0.7 ; ID=1.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT89 Low on-resistance
0.1. Size:330K diodes
zxmn10a07zta.pdf
A Product Line of Diodes IncorporatedZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 1.4A Low Gate Drive 100V 900m @ VGS = 6V 1.2A Totally Lead-Free & Fully RoHS compliant (Not
0.2. Size:744K cn vbsemi
zxmn10a07zta.pdf
ZXMN10A07ZTAwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.102 at VGS = 10 V 4.20.120 at VGS = 6 V 100 3.8 2.9 nC0.125 at VGS = 4.5 V 3.6APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs
5.1. Size:265K diodes
zxmn10a07fta zxmn10a07ftc.pdf
A Product Line ofDiodes IncorporatedZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features Low On-ResistanceID Low ThresholdBVDSS RDS(ON) Max TA = +25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 0.76A Low Gate Drive 100V 900m @ VGS = 6V 0.67A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal
5.2. Size:269K diodes
zxmn10a07f.pdf
ZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT23 Low on-resistance
Datasheet: BSS123W
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