ASB70R380E PDF and Equivalents Search

 

ASB70R380E Specs and Replacement

Type Designator: ASB70R380E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 750 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.8 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO263

ASB70R380E substitution

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ASB70R380E datasheet

 ..1. Size:1103K  cn anhi
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ASB70R380E

ASA70R380E, ASD70R380 380E, ASB70R380E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward transistor forward topologies. PC power, PD Adaptor,LCD & PDP TV and Adaptor,LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) resistance RDS(ON) = 0.346 (typ.) Easy to control Gate switching Enhancement mode ... See More ⇒

Detailed specifications: ASA70R950E , ASA80R290E , ASA80R750E , ASA80R900E , ASB60R150E , ASB65R120EFD , ASB65R220E , ASB65R300E , 20N60 , ASB80R750E , , , , , , , .

History: ASB60R150E

Keywords - ASB70R380E MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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