AUA039N10 Specs and Replacement
Type Designator: AUA039N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 125 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 865 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
Package: TO220F
AUA039N10 substitution
- MOSFET ⓘ Cross-Reference Search
AUA039N10 datasheet
aun036n10 aup039n10 aua039n10 aub039n10.pdf
AUN036N10, AUP039N10, AUA039N10, AUB039N10 MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance DFN5x6 RDS(ON) = 3.3m (typ.) TO220&220F&263 RDS(ON) = 3.6m (typ.) Easy to control Gate switching Enhancement mode Vth = 1.2 to... See More ⇒
Detailed specifications: ASW60R150E, ASW65R041E, ASW65R041EFDA, ASW65R046EFD, ASW65R095EFD, ASW65R110E, ASW65R120EFD, ASW80R290E, 4435
Keywords - AUA039N10 MOSFET specs
AUA039N10 cross reference
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AUA039N10 substitution
AUA039N10 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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