AUB062N08BG PDF and Equivalents Search

 

AUB062N08BG Specs and Replacement

Type Designator: AUB062N08BG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.7 nS

Cossⓘ - Output Capacitance: 674 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm

Package: TO263

AUB062N08BG substitution

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AUB062N08BG datasheet

 ..1. Size:498K  cn anhi
aua062n08bg aub062n08bg aup062n08bg aun062n08bg aud062n08bg.pdf pdf_icon

AUB062N08BG

AUA 8BG, AU N08BG, AUP062 G, A062N08 UB062N 2N08BG AUN 8BG, AU N08BG N062N08 UD062N MO con N-Chan OSFET Silic nnel MOS 1. Applicatio ons Synchronou on in SMPS, us rectificatio Hard switch h speed circu hing and High uit DC/DC in te elecoms and inductrial 2. Features Low drain-s sistance RD 6m (typ.) source on-res DS(ON) = 5.6 High speed power switc ching Enhance... See More ⇒

 9.1. Size:502K  cn anhi
aua060n08ag aub060n08ag aup060n08ag aun060n08ag aud060n08ag.pdf pdf_icon

AUB062N08BG

AUA 8AG, AU N08AG, AUP060 G, A060N08 UB060N 0N08AG AUN 8AG, AU N08AG N060N08 UD060N MO con N-Chan OSFET Silic nnel MOS 1. Applicatio ons Synchronou on in SMPS, us rectificatio Hard switch h speed circu hing and High uit DC/DC in te elecoms and inductrial 2. Features Low drain-s sistance RD 6m (typ.) source on-res DS(ON) = 5.6 High speed power switc ching Enhance... See More ⇒

Detailed specifications: AUB039N10, AUB045N10BT, AUB045N12, AUB050N055, AUB050N085, AUB056N08BGL, AUB056N10, AUB060N08AG, STP80NF70

Keywords - AUB062N08BG MOSFET specs

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