AUB062N08BG Specs and Replacement
Type Designator: AUB062N08BG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13.7 nS
Cossⓘ - Output Capacitance: 674 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO263
AUB062N08BG substitution
- MOSFET ⓘ Cross-Reference Search
AUB062N08BG datasheet
aua062n08bg aub062n08bg aup062n08bg aun062n08bg aud062n08bg.pdf
AUA 8BG, AU N08BG, AUP062 G, A062N08 UB062N 2N08BG AUN 8BG, AU N08BG N062N08 UD062N MO con N-Chan OSFET Silic nnel MOS 1. Applicatio ons Synchronou on in SMPS, us rectificatio Hard switch h speed circu hing and High uit DC/DC in te elecoms and inductrial 2. Features Low drain-s sistance RD 6m (typ.) source on-res DS(ON) = 5.6 High speed power switc ching Enhance... See More ⇒
aua060n08ag aub060n08ag aup060n08ag aun060n08ag aud060n08ag.pdf
AUA 8AG, AU N08AG, AUP060 G, A060N08 UB060N 0N08AG AUN 8AG, AU N08AG N060N08 UD060N MO con N-Chan OSFET Silic nnel MOS 1. Applicatio ons Synchronou on in SMPS, us rectificatio Hard switch h speed circu hing and High uit DC/DC in te elecoms and inductrial 2. Features Low drain-s sistance RD 6m (typ.) source on-res DS(ON) = 5.6 High speed power switc ching Enhance... See More ⇒
Detailed specifications: AUB039N10, AUB045N10BT, AUB045N12, AUB050N055, AUB050N085, AUB056N08BGL, AUB056N10, AUB060N08AG, STP80NF70
Keywords - AUB062N08BG MOSFET specs
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AUB062N08BG replacement
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MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
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