AUR020N085 Specs and Replacement

Type Designator: AUR020N085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 275 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 195 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 47 nS

Cossⓘ - Output Capacitance: 3500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TOLL

AUR020N085 substitution

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AUR020N085 datasheet

 ..1. Size:946K  cn anhi
 aup026n085 aub026n085 aur020n085.pdf pdf_icon

AUR020N085

AUP026N085, AUB026N085, AUR020N085 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance TO220&TO263 RDS(on) = 2.1m (typ.) TOLL-8L RDS(on) = 1.8 m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced... See More ⇒

 7.1. Size:1123K  cn anhi
 aur020n10 auw025n10.pdf pdf_icon

AUR020N085

AUR020N10, AUW025N10 MOSFET Silicon N-Channel MOS 1. Applications Synchronous rectification in SMPS, Hard switching and High speed circuit DC/DC in telecoms and industrial 2. Features Low drain-source on-resistance RDS(on) TOLL = 1.6m (typ.) RDS(on) TO247 = 2.1m (typ.) High speed power switching Enhanced body diode dv/dt capability Enhanced avalanche ruggedness ... See More ⇒

Detailed specifications: AP220N04T, HYG053N10NS1P, HYG053N10NS1B, AUP060N08AG, AUP062N08BG, AUP065N10, AUP074N10, AUR014N10, K2611

Keywords - AUR020N085 MOSFET specs

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