AP6NA3R2MT Specs and Replacement

Type Designator: AP6NA3R2MT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00328 Ohm

Package: PMPAK5X6

AP6NA3R2MT substitution

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AP6NA3R2MT datasheet

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AP6NA3R2MT

AP6NA3R2MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 60V D Simple Drive Requirement RDS(ON) 3.28m Lower On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP6NA3R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos... See More ⇒

Detailed specifications: AP3N5R0MT, AP3N9R5MT, AP3N9R5YT, AP3P020H, AP3P050AH, AP4024GEMT-HF, AP4NAR95CMT-A, AP65SA145DDT8, IRF540N

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs