CM3407 Specs and Replacement
Type Designator: CM3407
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 73 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
CM3407 substitution
- MOSFET ⓘ Cross-Reference Search
CM3407 datasheet
cm3407.pdf
CM3407 P-Channel 30V (D-S) Power MOSFET Description Applications CM3407 is the P-Channel enhancement mode power field Cellular Handsets and Accessories effect transistors with high cell density, trench technology. Personal Digital Assistants This high density process and design have been optimized Portable Instrumentation switching performance and especially tai... See More ⇒
cm3400.pdf
CM3400 N-Channel 30V (D-S) Power MOSFET Description Applications CM3400 is the N-Channel enhancement mode power field Cellular Handsets and Accessories effect transistors with high cell density, trench technology. Personal Digital Assistants This high density process and design have been optimized Portable Instrumentation switching performance and especially tai... See More ⇒
Detailed specifications: AP65SA145DDT8, AP6NA3R2MT, CRTT067N10N, EHBA036R1, FKBB3105, SVF11N65T, SVF11N65F, CM3400, IRLZ44N
Keywords - CM3407 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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