ASDM30P100KQ Datasheet. Specs and Replacement

Type Designator: ASDM30P100KQ  📄📄 

Marking Code: 30P100

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 109 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 30 nC

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 742 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

ASDM30P100KQ substitution

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ASDM30P100KQ datasheet

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ASDM30P100KQ

ASDM30P100KQ -30V P-Channel MOSFET Product Summary General Features Advanced groove technology is adopted BVDSS -30 V Provide excellent R DS(ON) RDS(on).Typ.@VGS=-10V m 5.0 Low gate charge and operate at low gate voltage Application ID -100 A Lithium battery protection Wireless impact Mobile phone fast charging Schematic diagram TO-252-2L top view ... See More ⇒

 6.1. Size:514K  1
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ASDM30P100KQ

ASDM30P11TD -30V P-Channel MOSFET Product Summary Features Low FOM RDS(on) Qgd 100% avalanche tested V DS -30 V Easy to use/drive RoHS compliant R DS(on),TYP@ VGS=10 V 6.4 m I D -55 A Application Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load Switch PDFN3*3-8 Absolute Maximum Ratings TA = 25 u... See More ⇒

 6.2. Size:514K  ascend
asdm30p11td.pdf pdf_icon

ASDM30P100KQ

ASDM30P11TD -30V P-Channel MOSFET Product Summary Features Low FOM RDS(on) Qgd 100% avalanche tested V DS -30 V Easy to use/drive RoHS compliant R DS(on),TYP@ VGS=10 V 6.4 m I D -55 A Application Power Switch Circuit of Adaptor and Charger Battery Protection Charge/Discharge Notebook AC-in Load Switch PDFN3*3-8 Absolute Maximum Ratings TA = 25 u... See More ⇒

 7.1. Size:435K  1
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ASDM30P100KQ

ASDM30P30CTD -30V P-Channel MOSFET Features Product Summary Low RDS(ON) Fast switching V -30 V DSS Green Device Available R 15 m DS(ON)-Typ. Application I -30 A D MB / VGA / Vcore POL Applications DFN3*3-8 P-MOSFET Absolute Maximum Ratings (T =25 C Unless Otherwise Noted) J Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 V VGSS Gate-... See More ⇒

Detailed specifications: ASDM30DN30E, ASDM30DN40E, ASDM30N100KQ, ASDM30N120KQ, ASDM30N120Q, ASDM30N150Q, ASDM30N75KQ, ASDM30N90Q, AO3400A

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