BCT7N65 Datasheet. Specs and Replacement
Type Designator: BCT7N65 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33.4 nS
Cossⓘ - Output Capacitance: 111 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO220F
BCT7N65 substitution
- MOSFET ⓘ Cross-Reference Search
BCT7N65 datasheet
Detailed specifications: ASDM30N100KQ, ASDM30N120KQ, ASDM30N120Q, ASDM30N150Q, ASDM30N75KQ, ASDM30N90Q, ASDM30P100KQ, BCT20N65, STP65NF06, BCD7N65, BCT4N65, BCD4N65, BCT12N65, BCD12N65, H50N06, T50N06, BCD80N06
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
