BCD7N65 Datasheet. Specs and Replacement

Type Designator: BCD7N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.4 nS

Cossⓘ - Output Capacitance: 111 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

BCD7N65 substitution

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BCD7N65 datasheet

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BCD7N65

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Detailed specifications: ASDM30N120KQ, ASDM30N120Q, ASDM30N150Q, ASDM30N75KQ, ASDM30N90Q, ASDM30P100KQ, BCT20N65, BCT7N65, IRF1405, BCT4N65, BCD4N65, BCT12N65, BCD12N65, H50N06, T50N06, BCD80N06, BCD90N03

Keywords - BCD7N65 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs