BCD4N65 Datasheet. Specs and Replacement

Type Designator: BCD4N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO252

BCD4N65 substitution

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BCD4N65 datasheet

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 bct4n65 bcd4n65.pdf pdf_icon

BCD4N65

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Detailed specifications: ASDM30N150Q, ASDM30N75KQ, ASDM30N90Q, ASDM30P100KQ, BCT20N65, BCT7N65, BCD7N65, BCT4N65, IRFZ48N

Keywords - BCD4N65 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.