H50N06 Datasheet. Specs and Replacement

Type Designator: H50N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 113 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO251

H50N06 substitution

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H50N06 datasheet

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 e50n06 d50n06 h50n06 t50n06.pdf pdf_icon

H50N06

50N06 60V N-Channel Power MOSFET TO-263 TO-252 Features Low FOM RDS(on) Qgd 100% avalanche tested Easy to use/drive RoHS compliant TO-251 TO-220 Drain Applications DC/DC Converter Battery Protection Charge/Discharge Gate Load Switch Synchronous Rectification Source Key Performance Parameters Parameter Value Unit VDS@ Tc=25 60 V RDS(on),... See More ⇒

 0.1. Size:1704K  cn wxdh
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H50N06

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 h50n03j.pdf pdf_icon

H50N06

Spec. No. MOS200514 HI-SINCERITY Issued Date 2005.01.01 Revised Date 2005.10.14 MICROELECTRONICS CORP. Page No. 1/5 H50N03J Pin Assignment H50N03J Tab 3-Lead Plastic TO-252 Package Code J N-Channel Enhancement-Mode MOSFET (25V, 50A) Pin 1 Gate 3 Pin 2 & Tab Drain 2 1 Pin 3 Source D Features Internal Schematic Diagram RDS(on)=6m @VGS=10V, ID=30A G RDS... See More ⇒

Detailed specifications: ASDM30P100KQ, BCT20N65, BCT7N65, BCD7N65, BCT4N65, BCD4N65, BCT12N65, BCD12N65, IRLB3034

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