BMDFN2301 Datasheet. Specs and Replacement
Type Designator: BMDFN2301 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.69 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
Package: DFN1006-3L
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BMDFN2301 substitution
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BMDFN2301 datasheet
bmdfn2301.pdf
BMDFN2301 P-Channel MOSFET Features Pin Configurations V = -20V DS I D = -0.74A D R @V = -4.5V, TYP =230m DS(ON) GS R @V = -2.8V, TYP =320m DS(ON) GS R @V = -2.5V, TYP =355m DS(ON) GS R @V = -1.8V, TYP =650m DS(ON) GS S G General Description G Advanced trench process technology S D High Density Cell Design For Ultra Low On-Resistance ... See More ⇒
bmdfn2302.pdf
BMDFN2302 N-Channel MOSFET Features Pin Configurations V = 20V DS I D = 0.71A D R @V = 4.5V, TYP =220m DS(ON) GS R @V = 2.5V, TYP =260m DS(ON) GS R @V = 1.8V, TYP =315m DS(ON) GS G S General Description Trench Technology G S Supper high density cell design D Excellent ON resistance for higher DC current Extremely Low Threshold Voltage ... See More ⇒
Detailed specifications: AOL1718, CS65N25AKR, AO3401F, AO3415E, BM3134E, BM3134KE, BM3139KT, BM8205, IRF730
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
