2N6766JTX Datasheet. Specs and Replacement

Type Designator: 2N6766JTX  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO204

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2N6766JTX datasheet

 8.1. Size:142K  1
 2n6766.pdf pdf_icon

2N6766JTX

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 8.2. Size:145K  international rectifier
 2n6766 irf250.pdf pdf_icon

2N6766JTX

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085 30A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique ... See More ⇒

 8.3. Size:64K  omnirel
 2n6764 2n6766 2n6768 2n6770.pdf pdf_icon

2N6766JTX

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/543 DESCRIPTION... See More ⇒

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Detailed specifications: 2N6764JANTXV, 2N6764JTX, 2N6764JTXV, 2N6765, 2N6766, 2N6766JAN, 2N6766JANTX, 2N6766JANTXV, IRFZ24N, 2N6766JTXV, 2N6767, 2N6768, 2N6768JAN, 2N6768JANTX, 2N6768JANTXV, 2N6768JTX, 2N6768JTXV

Keywords - 2N6766JTX MOSFET specs

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