BMS2301 Datasheet. Specs and Replacement

Type Designator: BMS2301  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT323

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BMS2301 datasheet

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BMS2301

BMS2301 P-Channel MOSFET Features Pin Configurations V = -20V DS I D = -1.4A R @V = -4.5V, Max =100m DS(ON) GS R @V = -2.5V, Max =140m DS(ON) GS R @V = -1.8V, Max =210m DS(ON) GS General Description Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-323 for Surface Mount Package. Absolute Maximum Ratings ... See More ⇒

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BMS2301

BMS2302 N-Channel MOSFET Features Pin Configurations V = 20V DS I D = 2.1A R @V = 4.5V, Max =68m DS(ON) GS R @V = 2.5V, Max =115m DS(ON) GS General Description Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance SOT-323 for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A Pa... See More ⇒

Detailed specifications: AO3401F, AO3415E, BM3134E, BM3134KE, BM3139KT, BM8205, BMDFN2301, BMDFN2302, IRF3205

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