BL4N90 Datasheet. Specs and Replacement

Type Designator: BL4N90  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220 TO220F TO251 TO252

  📄📄 Copy 

BL4N90 substitution

- MOSFET ⓘ Cross-Reference Search

 

BL4N90 datasheet

 ..1. Size:664K  belling
 bl4n90.pdf pdf_icon

BL4N90

BL4N90 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL4N90, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications... See More ⇒

Detailed specifications: BM8205, BMDFN2301, BMDFN2302, BMS2301, BMS2302, BMSN3139, SI2301F, SI2309S, IRF540

Keywords - BL4N90 MOSFET specs

 BL4N90 cross reference

 BL4N90 equivalent finder

 BL4N90 pdf lookup

 BL4N90 substitution

 BL4N90 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility