MSB100N023 Datasheet. Specs and Replacement

Type Designator: MSB100N023  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 250 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.8 nS

Cossⓘ - Output Capacitance: 2020 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO263

  📄📄 Copy 

MSB100N023 substitution

- MOSFET ⓘ Cross-Reference Search

 

MSB100N023 datasheet

 ..1. Size:660K  bruckewell
 msb100n023.pdf pdf_icon

MSB100N023

MSB100N023 N-Channel 100-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize R , provide superior switching performance, DS(ON) and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. ... See More ⇒

Detailed specifications: MS23N06A, MS23P03, MS34P01, MS34P07, MS40N05, MS40P05, MS40P05AU, MS60P03, 2N7000

Keywords - MSB100N023 MOSFET specs

 MSB100N023 cross reference

 MSB100N023 equivalent finder

 MSB100N023 pdf lookup

 MSB100N023 substitution

 MSB100N023 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility