MSD40P45 Datasheet. Specs and Replacement

Type Designator: MSD40P45  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO252

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MSD40P45 datasheet

 ..1. Size:723K  bruckewell
 msd40p45.pdf pdf_icon

MSD40P45

MSD40P45 P-Channel 40-V (D-S) MOSFET Description Graphic Symbol The device is using trench DMOS technology. This advanced technology has been especially tailored to minimize R , provide superior switching performance, DS(ON) and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. The ... See More ⇒

 8.1. Size:523K  bruckewell
 msd40p03.pdf pdf_icon

MSD40P45

Bruckewell Technology Corp., Ltd. MSD40P03 P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS (on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards... See More ⇒

Detailed specifications: MS23P03, MS34P01, MS34P07, MS40N05, MS40P05, MS40P05AU, MS60P03, MSB100N023, P55NF06

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.