MSQ30P07D Datasheet. Specs and Replacement

Type Designator: MSQ30P07D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.8 nS

Cossⓘ - Output Capacitance: 194 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

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MSQ30P07D datasheet

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MSQ30P07D

MSQ30P07D Dual P-Channel 30-V (D-S) MOSFET Graphic Symbol Description The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the DS(ON) synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability ap... See More ⇒

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MSQ30P07D

MSQ30P40D Dual P-Channel 30-V (D-S) MOSFET Graphic Symbol Description The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full Package Dimension fun... See More ⇒

 8.2. Size:346K  bruckewell
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MSQ30P07D

MSQ30P15 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The device is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The device meets the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. ... See More ⇒

Detailed specifications: MSH100N045SA, MSH30P100, MSH40N032, MSH60N35D, MSHM30N46, MSHM40N085, MSHM60P14, MSQ100N03D, IRF1010E

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