BC3400 Datasheet. Specs and Replacement

Type Designator: BC3400  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7_max nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT23

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BC3400 datasheet

 ..1. Size:1042K  cn cbi
 bc3400.pdf pdf_icon

BC3400

SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect Transistor SOT-23 FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability 1. GATE 2. SOURCE 3. DRAIN MARKING 3400 Maximum ratings ( Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Sourc... See More ⇒

 9.1. Size:1094K  cn cbi
 bc3401.pdf pdf_icon

BC3400

P-Channel Enhancement Mode Field Effect Transistor General Description Features The BC3401 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), low gate charge and ID = -4.2 A (VGS = -10V) operation with gate voltages as low as 2.5V. This RDS(ON) ... See More ⇒

 9.2. Size:1092K  cn cbi
 bc3407.pdf pdf_icon

BC3400

SOT-23 Plastic-Encapsulate MOSFETS P-Channel Enhancement Mode Field Effect Transistor General Description SOT-23 The BC3407 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. 1. GATE 2. SOURCE 3. DRAIN MARKING 3407 Maximum ratings (Ta=25 unless otherwise noted) Paramete... See More ⇒

Detailed specifications: CS95118, 2SK3018WT, 2SK3019W, 2SK3019WT, BC1012, BC1012T, BC1012W, BC2301, CS150N03A8

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.