CEP100N10L Datasheet PDF and Equivalents Search

 ..1. Size:508K  cet
 cep100n10l ceb100n10l.pdf

CEP100N10L/CEB100N10L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 92A, RDS(ON) = 8.2m @VGS = 10V. RDS(ON) = 10.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C u... See More ⇒

 9.1. Size:420K  cet
 cep10n6 ceb10n6 cef10n6.pdf

CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP10N6 600V 0.75 10A 10V CEB10N6 600V 0.75 10A 10V CEF10N6 600V 0.75 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PA... See More ⇒

 9.2. Size:109K  cet
 cep10n4 ceb10n4 cei10n4 cef10n4.pdf

CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP10N4 450V 0.7 10A 10V CEB10N4 450V 0.7 10A 10V CEI10N4 450V 0.7 10A 10V CEF10N4 450V 0.7 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO... See More ⇒

 9.3. Size:385K  cet
 cep10n65 ceb10n65 cef10n65.pdf

CEP10N65/CEB10N65 CEF10N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP10N65 650V 0.85 10A 10V CEB10N65 650V 0.85 10A 10V CEF10N65 650V 0.85 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CE... See More ⇒

 9.4. Size:320K  ncepower
 ncep10n85aq.pdf

http //www.ncepower.com NCEP10N85AQ NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AQ uses Super Trench II technology that is VDS =85V,ID =51A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12.5m (typical) @ VGS=4.5V loss... See More ⇒

 9.5. Size:417K  ncepower
 ncep10n12 ncep10n12d.pdf

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@... See More ⇒

 9.6. Size:729K  ncepower
 ncep10n12ak.pdf

NCEP10N12AK NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =9m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination ... See More ⇒

 9.7. Size:937K  ncepower
 ncep10n12k.pdf

NCEP10N12K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =120V,I =65A DS D switching performance. Both conduction and switching power R =8.7m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combination... See More ⇒

 9.8. Size:409K  ncepower
 ncep10n12g.pdf

NCEP10N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio... See More ⇒

 9.9. Size:417K  ncepower
 ncep10n12.pdf

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@... See More ⇒

 9.10. Size:417K  ncepower
 ncep10n12d.pdf

NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@... See More ⇒

 9.11. Size:329K  ncepower
 ncep10n85ag.pdf

http //www.ncepower.com NCEP10N85AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP10N85AG uses Super Trench II technology that is VDS =85V,ID =58A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=11.5m (typical) @ VGS=4.5V loss... See More ⇒