DMP2160UFDB MOSFET Datasheet: P-Ch, 20V, 3.8A. Full specification with pinout and replacement list

DMP2160UFDB Specs and Replacement

Type Designator: DMP2160UFDB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 632 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: UDFN20206

DMP2160UFDB substitution

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DMP2160UFDB datasheet

..1. Size:143K diodes
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DMP2160UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case DFN2020B-6 70m @VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 85m @VGS = -2.5V Moisture Sensitivity Level 1 per J-STD-020 ... See More ⇒

0.1. Size:332K diodes
dmp2160ufdbq.pdf pdf_icon

DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25 C Low Gate Threshold Voltage, -0.9V Max -3.8A 70m @ VGS = -4.5V Fast Switching Speed -20V 85m @ VGS = -2.5V -3.3A Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compli... See More ⇒

6.1. Size:128K diodes
dmp2160u.pdf pdf_icon

DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max 80 m @ VGS = -4.5V TA = 25 C 100 m @ VGS = -2.5V 80m @ VGS = -4.5V -3.2A 140 m @ VGS = -1.8V -20V Very Low Gate Threshold Voltage VGS(th) 1V 140m @ VGS = -1.8V -2.4A Low Input Capacitance Fast Swit... See More ⇒

6.2. Size:126K diodes
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