DMP2160UFDB
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMP2160UFDB
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9
V
|Id|ⓘ - Maximum Drain Current: 3.8
A
Qgⓘ - Total Gate Charge: 6.5
nC
Cossⓘ -
Output Capacitance: 632
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package: UDFN20206
DMP2160UFDB
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMP2160UFDB
Datasheet (PDF)
..1. Size:143K diodes
dmp2160ufdb.pdf 
DMP2160UFDBDUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN2020B-6 70m @VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 85m @VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020
0.1. Size:332K diodes
dmp2160ufdbq.pdf
DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25C Low Gate Threshold Voltage, -0.9V Max -3.8A 70m @ VGS = -4.5V Fast Switching Speed -20V 85m @ VGS = -2.5V -3.3A Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compli
6.1. Size:128K diodes
dmp2160u.pdf
DMP2160UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max 80 m @ VGS = -4.5V TA = 25C 100 m @ VGS = -2.5V 80m @ VGS = -4.5V -3.2A 140 m @ VGS = -1.8V -20V Very Low Gate Threshold Voltage VGS(th) 1V 140m @ VGS = -1.8V -2.4A Low Input Capacitance Fast Swit
6.2. Size:126K diodes
dmp2160uw.pdf
DMP2160UWP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 100 m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 120 m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D
6.3. Size:185K tysemi
dmp2160uw.pdf
Product specification DMP2160UWP-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT323 100m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. 120m @ VGS = -2.5V UL Flammability Classification Rating 94V-0 160m @ VGS = -1.8V Moisture Sensitivity: Level 1 per J-STD-020D Very Low Gate
6.4. Size:2500K cn tech public
tpdmp2160uw.pdf
TPDMP21 6 0UWP-Channel Enhancement-Mode MOS FETswww.sot23.com.twFeaturesApplications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering InformationPart Number Qty per Reel Reel SizeTPDMP2160UW 3000 7DSGSOT-323Absolute Maximum Ratings (TA=25C
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