ZXMP3F37N8 MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMP3F37N8
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.8 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 10.7 A
Total Gate Charge (Qg): 31.6 nC
Drain-Source Capacitance (Cd): 1678 pF
Maximum Drain-Source On-State Resistance (Rds): 0.041 Ohm
Package: SO8
ZXMP3F37N8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMP3F37N8 Datasheet (PDF)
7.1. zxmp3f36n8.pdf 
Size:247K _diodes
ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) (Ω) ID(A) -30 0.020 @ VGS=-10V -12.6 0.028 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features • Low on-resistance • SO8 package Applications • B
7.2. zxmp3f35n8.pdf Size:244K _diodes
ZXMP3F35N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) RDS(on) (Ω) ID(A) -30 0.012 @ VGS=-10V -17.1 0.018 @ VGS=-4.5V Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery protection and reverse connection application
7.3. zxmp3f30fh zxmp3f30fhta.pdf Size:210K _tysemi
Product specification ZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Summary V(BR)DSS (V) RDS(on) (Ω) ID (A) 0.080 @ VGS= -10V -4.0 -30 0.140 @ VGS= -4.5V Description This new generation Trench MOSFET from TY has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features • Low on-resistance • Fast swi
Datasheet: ZXMP3A16G , ZXMP3A16N8 , ZXMP3A17DN8 , ZXMP3A17E6 , ZXMP3F30FH , ZXMP3F35N8 , ZXMP3F36N8 , ZXMP3F37DN8 , BUZ10 , BSS84(Z) , BSS84DW , BSS84V , BSS84W , DMP4050SSD , DMP4050SSS , DMP4051LK3 , DMP57D5UFB .
