All MOSFET. ZXMP6A18DN8 Datasheet

 

ZXMP6A18DN8 MOSFET. Datasheet pdf. Equivalent

Type Designator: ZXMP6A18DN8

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2.1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 4.8 A

Drain-Source Capacitance (Cd): 1580 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: SO8

ZXMP6A18DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

ZXMP6A18DN8 Datasheet (PDF)

1.1. zxmp6a18dn8.pdf Size:183K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance S

2.1. zxmp6a18k.pdf Size:583K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S • Low on-resis

3.1. zxmp6a17dn8.pdf Size:170K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

ZXMP6A17DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2A DESCRIPTION This new generation of high cell density trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Lo

3.2. zxmp6a17g.pdf Size:635K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

A Product Line of Diodes Incorporated ZXMP6A17G 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Fast switching speed ID V(BR)DSS RDS(on) • Low gate drive TA = 25°C • Low input capacitance 125m? @ VGS= -10V -4.3A • “Green” component and RoHS compliant (Note 1) -60V • Qualified to AEC-Q101 Standards for High Reliability 190m? @ VGS= -4.5V -3.5

3.3. zxmp6a17n8.pdf Size:667K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

A Product Line of Diodes Incorporated ZXMP6A17N8 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Fast switching speed ID V(BR)DSS RDS(on) • Low input capacitance TA = 25°C • “Green” component and RoHS compliant (Note 1) 125m? @ VGS = -10V -3.4A • Qualified to AEC-Q101 Standards for High Reliability -60V 190m? @ VGS = -4.5V -2.8A Mechanical D

3.4. zxmp6a13f.pdf Size:294K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits • Fast switching speed ID • Low input capacitance V(BR)DSS RDS(on) TA = 25°C • Low gate charge • Qualified to AEC-Q101 Standards for High Reliability 400m? @ VGS= -10V 400m? = -1.1A -60V 6

3.5. zxmp6a17e6.pdf Size:665K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

A Product Line of Diodes Incorporated ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low on-resistance ID Max • Fast switching speed V(BR)DSS RDS(on) Max TA = 25°C • Low threshold (Note 5) • Low gate drive • Low input capacitance 125m? @ VGS = -10V -3.0 A • “Lead Free”, RoHS Compliant (Note 1) -60V 190m? @ VGS = -4.5V -2.4 A •

3.6. zxmp6a16dn8.pdf Size:187K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

ZXMP6A16DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.085 ; ID= -3.9A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance S

3.7. zxmp6a13g.pdf Size:686K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

A Product Line of Diodes Incorporated ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits • Fast switching speed ID V(BR)DSS RDS(on) • Low gate drive TA = 25°C • Low input capacitance 390m? @ VGS= -10V -2.3A • Qualified to AEC-Q101 Standards for High Reliability -60V 595m? @ VG

3.8. zxmp6a16k.pdf Size:569K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

ZXMP6A16K 60V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.085 @ VGS= -10V 8.2 -60 0.125 @ VGS= -4.5V 6.75 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S • Low on-resist

3.9. zxmp6a17k.pdf Size:684K _diodes

ZXMP6A18DN8
ZXMP6A18DN8

A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits • Low on-resistance ID V(BR)DSS RDS(on) • Fast switching speed TA = 25°C • “Green” component and RoHS compliant (Note 1) 125m? @ VGS= -10V -6.6A -60V 190m? @ VGS= -4.5V -5.3A Mechanical Data

Datasheet: ZXMP6A13G , ZXMP6A16DN8 , ZXMP6A16K , ZXMP6A17DN8 , ZXMP6A17E6 , ZXMP6A17G , ZXMP6A17K , ZXMP6A17N8 , 2SK3562 , ZXMP6A18K , ZXMP7A17G , ZXMP7A17K , ZVP4424Z , ZVP4525E6 , ZVP4525G , ZVP4525Z , ZXMP10A13F .

 


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