ZXMP6A18DN8 MOSFET Datasheet: P-Ch, 60V, 4.8A. Full specification with pinout and replacement list

ZXMP6A18DN8 Specs and Replacement

   Type Designator: ZXMP6A18DN8
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A

Electrical Characteristics

   Cossⓘ - Output Capacitance: 1580 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SO8

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ZXMP6A18DN8 datasheet

..1. Size:183K diodes
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ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistan... See More ⇒

0.1. Size:925K cn vbsemi
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ZXMP6A18DN8TA www.VBsemi.tw Dual P-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.059 at VGS = - 10 V - 5.3 100 % UIS Tested RoHS - 60 17 nC COMPLIANT 0.069 at VGS = - 4.5 V - 5.0 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 T... See More ⇒

6.1. Size:583K diodes
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ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V(BR)DSS = -60V RDS(on) = 0.055 ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, G power management applications. Features S Low on-... See More ⇒

6.2. Size:580K zetex
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