Справочник MOSFET. ZXMP6A18DN8

 

ZXMP6A18DN8 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ZXMP6A18DN8
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4.8 A
   Qgⓘ - Общий заряд затвора: 23 nC
   Cossⓘ - Выходная емкость: 1580 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: SO8

 Аналог (замена) для ZXMP6A18DN8

 

 

ZXMP6A18DN8 Datasheet (PDF)

 ..1. Size:183K  diodes
 zxmp6a18dn8.pdf

ZXMP6A18DN8 ZXMP6A18DN8

ZXMP6A18DN8DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power managementapplications.FEATURES Low on-resistan

 0.1. Size:925K  cn vbsemi
 zxmp6a18dn8ta.pdf

ZXMP6A18DN8 ZXMP6A18DN8

ZXMP6A18DN8TAwww.VBsemi.twDual P-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.059 at VGS = - 10 V - 5.3 100 % UIS TestedRoHS- 60 17 nCCOMPLIANT0.069 at VGS = - 4.5 V - 5.0APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25T

 6.1. Size:583K  diodes
 zxmp6a18k.pdf

ZXMP6A18DN8 ZXMP6A18DN8

ZXMP6A18K60V P-channel enhancement mode MOSFETSummaryV(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description DThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,Gpower management applications. Features S Low on-

 6.2. Size:580K  zetex
 zxmp6a18ktc.pdf

ZXMP6A18DN8 ZXMP6A18DN8

ZXMP6A18K60V P-channel enhancement mode MOSFETSummaryV(BR)DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description DThis new generation of trench MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage,Gpower management applications. Features S Low on-

 6.3. Size:882K  cn vbsemi
 zxmp6a18ktc.pdf

ZXMP6A18DN8 ZXMP6A18DN8

ZXMP6A18KTCwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge

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