All MOSFET. ZVP4525G Datasheet

 

ZVP4525G Datasheet and Replacement


   Type Designator: ZVP4525G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 0.265 A
   Cossⓘ - Output Capacitance: 73 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 14 Ohm
   Package: SOT223
 

 ZVP4525G substitution

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ZVP4525G Datasheet (PDF)

 ..1. Size:323K  diodes
zvp4525g.pdf pdf_icon

ZVP4525G

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

 0.1. Size:321K  diodes
zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525G

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

 7.1. Size:137K  diodes
zvp4525z.pdf pdf_icon

ZVP4525G

ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu

 7.2. Size:409K  diodes
zvp4525e6ta zvp4525e6tc.pdf pdf_icon

ZVP4525G

ZVP4525E6250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF624S

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