ZVP4525G
MOSFET. Datasheet pdf. Equivalent
Type Designator: ZVP4525G
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 0.265
A
Qgⓘ - Total Gate Charge: 2.45
nC
Cossⓘ -
Output Capacitance: 73
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 14
Ohm
Package:
SOT223
ZVP4525G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZVP4525G
Datasheet (PDF)
..1. Size:323K diodes
zvp4525g.pdf
ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av
0.1. Size:321K diodes
zvp4525gta zvp4525gtc.pdf
ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av
7.1. Size:137K diodes
zvp4525z.pdf
ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu
7.2. Size:409K diodes
zvp4525e6ta zvp4525e6tc.pdf
ZVP4525E6250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener
7.3. Size:132K diodes
zvp4525zta.pdf
ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu
7.4. Size:411K diodes
zvp4525e6.pdf
ZVP4525E6250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener
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