ZVP4525G. Аналоги и основные параметры
Наименование производителя: ZVP4525G
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 40 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.265 A
Электрические характеристики
Cossⓘ - Выходная емкость: 73 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 14 Ohm
Тип корпуса: SOT223
Аналог (замена) для ZVP4525G
- подборⓘ MOSFET транзистора по параметрам
ZVP4525G даташит
zvp4525g.pdf
ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v
zvp4525gta zvp4525gtc.pdf
ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v
zvp4525z.pdf
ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced SOT89 secondary breakdown. Applications benefiting from this device inclu
zvp4525e6ta zvp4525e6tc.pdf
ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener
Другие MOSFET... ZXMP6A17K , ZXMP6A17N8 , ZXMP6A18DN8 , ZXMP6A18K , ZXMP7A17G , ZXMP7A17K , ZVP4424Z , ZVP4525E6 , IRFZ44N , ZVP4525Z , ZXMP10A13F , ZXMP10A16K , ZXMP10A17E6 , ZXMP10A17G , ZXMP10A17K , ZXMP10A18G , ZXMP10A18K .
History: AOD409 | SL2309A | ZVP4424Z | SL2318 | RDX060N60FU6 | RUH120N35L
History: AOD409 | SL2309A | ZVP4424Z | SL2318 | RDX060N60FU6 | RUH120N35L
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