Справочник MOSFET. ZVP4525G

 

ZVP4525G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZVP4525G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 40 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.265 A
   Cossⓘ - Выходная емкость: 73 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 14 Ohm
   Тип корпуса: SOT223
     - подбор MOSFET транзистора по параметрам

 

ZVP4525G Datasheet (PDF)

 ..1. Size:323K  diodes
 zvp4525g.pdf pdf_icon

ZVP4525G

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

 0.1. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525G

ZVP4525G250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14V; ID=-265mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include av

 7.1. Size:137K  diodes
 zvp4525z.pdf pdf_icon

ZVP4525G

ZVP4525Z250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mADESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedSOT89secondary breakdown. Applications benefiting from this device inclu

 7.2. Size:409K  diodes
 zvp4525e6ta zvp4525e6tc.pdf pdf_icon

ZVP4525G

ZVP4525E6250V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARY(DESCRIPTIONThis 250V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highSOT23-6impedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device include avariety of Telecom and gener

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History: SSD20N15-250D | AO4824L | 2SK2525-01 | AP55T10GH-HF | MTB1D7N03ATH8 | 2SK610 | WMO5N50D1B

 

 
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