All MOSFET. ZXMC3A16DN8 Datasheet

 

ZXMC3A16DN8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMC3A16DN8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.4 A
   Qgⓘ - Total Gate Charge: 9.2 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SO8

 ZXMC3A16DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMC3A16DN8 Datasheet (PDF)

 ..1. Size:312K  diodes
zxmc3a16dn8.pdf

ZXMC3A16DN8
ZXMC3A16DN8

ZXMC3A16DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4AP-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage,

 7.1. Size:686K  diodes
zxmc3a18dn8.pdf

ZXMC3A16DN8
ZXMC3A16DN8

ZXMC3A18DN8Complementary 30V enhancement mode MOSFETSummary N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DescriptionD1 D2 This new generation of trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. This makesG1 G2 them ideal for high ef

 7.2. Size:280K  diodes
zxmc3a17dn8.pdf

ZXMC3A16DN8
ZXMC3A16DN8

ZXMC3A17DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4AP-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltag

 8.1. Size:731K  diodes
zxmc3amc.pdf

ZXMC3A16DN8
ZXMC3A16DN8

A Product Line ofDiodes IncorporatedZXMC3AMC30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low RJA, thermally efficient package Device V(BR)DSS RDS(on) max TA = 25C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switchi

 8.2. Size:724K  diodes
zxmc3am832.pdf

ZXMC3A16DN8
ZXMC3A16DN8

OBSOLETE- PLEASE USE ZXMC3AMCTAZXMC3AM832MPPS Miniature Package Power SolutionsCOMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7AP-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7ADESCRIPTIONPackaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)outline this dual 30V N channel Trench MOSFET utilizes a unique stru

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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