ZXMC3A16DN8 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ZXMC3A16DN8
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.4 A
Qg ⓘ - Общий заряд затвора: 9.2 nC
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: SO8
Аналог (замена) для ZXMC3A16DN8
ZXMC3A16DN8 Datasheet (PDF)
zxmc3a16dn8.pdf

ZXMC3A16DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4AP-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage,
zxmc3a18dn8.pdf

ZXMC3A18DN8Complementary 30V enhancement mode MOSFETSummary N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DescriptionD1 D2 This new generation of trench MOSFETs from Zetexutilizes a unique structure that combines the benefits oflow on-resistance with fast switching speed. This makesG1 G2 them ideal for high ef
zxmc3a17dn8.pdf

ZXMC3A17DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETSUMMARYN-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4AP-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4ADESCRIPTIONThis new generation of trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltag
zxmc3amc.pdf

A Product Line ofDiodes IncorporatedZXMC3AMC30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low RJA, thermally efficient package Device V(BR)DSS RDS(on) max TA = 25C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switchi
Другие MOSFET... DMG1016V , DMC3018LSD , DMC3021LK4 , DMC3021LSD , DMC3028LSD , DMC3032LSD , DMC3036LSD , DMG6602SVT , STP75NF75 , ZXMC3A17DN8 , ZXMC3A18DN8 , ZXMC3AMC , ZXMC3F31DN8 , ZXMD63C03X , BSS8402DW , DMC4028SSD , DMC4040SSD .
History: IPL65R725CFD | SIHP11N80E | NDT3055L | FS30KMJ-06F | 4N80 | NCE4614C | IRFS3107
History: IPL65R725CFD | SIHP11N80E | NDT3055L | FS30KMJ-06F | 4N80 | NCE4614C | IRFS3107



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