ZXMC4559DN8 MOSFET. Datasheet pdf. Equivalent
Type Designator: ZXMC4559DN8
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.7 A
Qgⓘ - Total Gate Charge: 11 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SO8
ZXMC4559DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ZXMC4559DN8 Datasheet (PDF)
zxmc4559dn8.pdf
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ZXMC4559DN8COMPLEMENTARY 60V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7AP-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.9ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage,
zxmc4a16dn8.pdf
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ZXMC4A16DN8COMPLEMENTARY 40V ENHANCEMENT MODE MOSFETSUMMARYN-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2AP-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7ADESCRIPTIONThis new generation of trench MOSFETs from Zetexutilises a unique structure that combines the benefitsof low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage
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