STU435S MOSFET. Datasheet pdf. Equivalent
Type Designator: STU435S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 38 A
Qgⓘ - Total Gate Charge: 20 nC
Cossⓘ - Output Capacitance: 229 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: TO252 DPAK
STU435S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STU435S Datasheet (PDF)
stu435s std435s.pdf
GrPPrPPSTU/D435SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.17.5 @ VGS=10VSuface Mount Package.-40V -38A27 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251
stu432s std432s.pdf
GreenProductSTU/D432SaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9 @ VGS=10VTO-252 and TO-251 Package.50A40V11 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251
stu438a std438a.pdf
GreenProductSTU/D438AaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9 @ VGS=10VTO-252 and TO251 Package.40V 47A11 @ VGS=4.5VGGSSSTU SERIESSTD SERIES(D- )TO - 252AA PAK ( )TO - 251 I - PAK
stu432l std432l.pdf
GrerrPPrPrProSTU/D432LaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.10 @ VGS=10VTO-252 and TO251 Package.40V 42A15 @ VGS=4.5VGGSSSTU SERIESSTD SERIES(D- )TO - 252AA PAK ( )TO -
stu437s std437s.pdf
STU437SGreenProductSTD437SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16 @ VGS=-10VSuface Mount Package.-40V -32A30 @ VGS=-4.5V GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251
stu434s std434s.pdf
GreenProductSTU/D434SaS mHop Microelectronics C orp.Ver 1.1N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.9.2 @ VGS=10VTO-252 and TO-251 Package.50A40V11.5 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO -
stu438s std438s.pdf
GreerrPPrPrProSTU/D438SaS mHop Microelectronics C orp.Ver 1.4N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m ) MaxVDSS IDRugged and reliable.9 @ VGS=10VTO-252 and TO-251 Package.50A40V11 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK (
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FDS4435
History: FDS4435
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