STU435S - описание и поиск аналогов

Gr P Pr P P STU/D435S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 17.5 @ VGS=10V Suface Mount Package. -40V -38A 27 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251

Green Product STU/D432S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251

Green Product STU/D438A a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO251 Package. 40V 47A 11 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO - 251 I - PAK

Gre r r P Pr Pr Pro STU/D432L a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 10 @ VGS=10V TO-252 and TO251 Package. 40V 42A 15 @ VGS=4.5V G G S S STU SERIES STD SERIES (D- ) TO - 252AA PAK ( ) TO -

STU437S Green Product STD437S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 16 @ VGS=-10V Suface Mount Package. -40V -32A 30 @ VGS=-4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251

Green Product STU/D434S a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9.2 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11.5 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO -

Gree r r P Pr Pr Pro STU/D438S a S mHop Microelectronics C orp. Ver 1.4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 9 @ VGS=10V TO-252 and TO-251 Package. 50A 40V 11 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK (