2SK875 PDF and Equivalents Search

 

2SK875 Specs and Replacement


   Type Designator: 2SK875
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO247
 

 2SK875 substitution

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2SK875 datasheet

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2SK875

2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit mm High breakdown voltage VGDS = -50 V High input impedance IGSS = -1.0 nA (max) (VGS = -30 V) Low noise NF = 0.5dB (typ.) (RG = 100 k , f = 120 Hz) Small package Absolute Maximum Ratings (Ta = ... See More ⇒

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2SK875

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Detailed specifications: 2SK705 , 2SK724 , 2SK738 , 2SK739 , 2SK799 , 2SK801 , 2SK802 , 2SK814 , IRF530 , 2SK876 , 2SK897 , 2SK897-MR , 2SK899 , 2SK900 , 2SK901 , 2SK902 , 2SK903 .

Keywords - 2SK875 MOSFET specs

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