2SK875
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK875
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 120
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6
Ohm
Package:
TO247
2SK875
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK875
Datasheet (PDF)
9.2. Size:576K toshiba
2sk879.pdf 
2SK879 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK879 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: VGDS = -50 V High input impedance: IGSS = -1.0 nA (max) (VGS = -30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 k, f = 120 Hz) Small package Absolute Maximum Ratings (Ta =
9.7. Size:223K inchange semiconductor
2sk870.pdf
isc N-Channel MOSFET Transistor 2SK870DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Datasheet: 2SK705
, 2SK724
, 2SK738
, 2SK739
, 2SK799
, 2SK801
, 2SK802
, 2SK814
, CS150N03A8
, 2SK876
, 2SK897
, 2SK897-MR
, 2SK899
, 2SK900
, 2SK901
, 2SK902
, 2SK903
.
