3LN01S MOSFET. Datasheet pdf. Equivalent

   Type Designator: 3LN01S
   Marking Code: YA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 0.15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.58 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 5.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.7 Ohm
   Package: SMCP

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