Справочник MOSFET. 3LN01S

 

3LN01S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 3LN01S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 5.9 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.7 Ohm
   Тип корпуса: SMCP

 Аналог (замена) для 3LN01S

 

 

3LN01S Datasheet (PDF)

 ..1. Size:48K  sanyo
 3ln01s.pdf

3LN01S 3LN01S

Ordering number : EN6957A3LN01SSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device3LN01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10

 0.1. Size:260K  sanyo
 3ln01ss.pdf

3LN01S 3LN01S

Ordering number : EN6546A3LN01SSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device3LN01SSApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS

 0.2. Size:27K  sanyo
 3ln01sp.pdf

3LN01S 3LN01S

Ordering number : ENN65453LN01SPN-Channel Silicon MOSFET3LN01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[3LN01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications3.03.8nomSANYO : SPAAbsolute Maximum Ratings at Ta=25C

 9.1. Size:47K  sanyo
 3ln01m.pdf

3LN01S 3LN01S

Ordering number : EN6138A3LN01MSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device3LN01MApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10

 9.2. Size:27K  sanyo
 3ln01n.pdf

3LN01S 3LN01S

Ordering number : ENN65443LN01NN-Channel Silicon MOSFET3LN01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.[3LN01N]5.04.04.00.450.50.440.451 2 31 : Source2 : Drain3 : GateSpecifications1.3 1.3 SANYO : NPAbsolute Maximum Ratings at Ta=25CParameter

 9.3. Size:250K  sanyo
 3ln01c.pdf

3LN01S 3LN01S

Ordering number : EN6260A3LN01CSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device3LN01CApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10

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