3LP01C MOSFET. Datasheet pdf. Equivalent
Type Designator: 3LP01C
Marking Code: XA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.43 nC
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 5.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 10.4 Ohm
Package: CP
3LP01C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
3LP01C Datasheet (PDF)
3lp01c.pdf
Ordering number : EN6645B3LP01CSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01CApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 10 V
3lp01ss.pdf
Ordering number : EN6648A3LP01SSSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01SSApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 10
3lp01n.pdf
Ordering number : ENN66463LP01NP-Channel Silicon MOSFET3LP01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.5.0[3LP01N]4.04.00.450.50.440.451 2 31 : Source2 : Drain3 : GateSpecifications1.3 1.3 SANYO : NPAbsolute Maximum Ratings at Ta=25CParameter
3lp01m.pdf
Ordering number : EN6139B3LP01MSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01MApplicationsFeatures Low ON-resistance. High-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS 10 V
3lp01sp.pdf
Ordering number : ENN66473LP01SPP-Channel Silicon MOSFET3LP01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[3LP01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications 3.03.8nom SANYO : SPAAbsolute Maximum Ratings at Ta=25CP
3lp01s.pdf
Ordering number : EN6681A3LP01SSANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device3LP01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --30 VGate-to-Source Voltage VGSS
mtp3lp01s3.pdf
Spec. No. : 794N3 Issued Date : 2011.03.14 CYStech Electronics Corp.Revised Date : 2013.09.09 Page No. : 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01S3 3@-4V 4.6@-2.5V RDSON(typ) 10.9@-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package. Equivalent Circuit Outline MTP3
mtp3lp01n3.pdf
Spec. No. : 794N3 Issued Date : 2010.06.17 CYStech Electronics Corp.Revised Date : 2014.01.17 Page No. : 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01N3 3@-4V 4.6@-2.5V RDSON(typ) 10.9@-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free lead plating and halogen-free package. Equ
mtp3lp01y3.pdf
Spec. No. : 794Y3 Issued Date : 2011.12.22 CYStech Electronics Corp.Revised Date : Page No. : 1/ 8 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01Y3 3@-4V 4.6@-2.5V RDSON(typ) 10.9@-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package lead plating and halogen-free package. Equiva
Datasheet: 2SK4209 , 2SK4210 , 2SK4221 , 2SK4222 , 2SK932 , 3LN01C , 3LN01M , 3LN01S , 10N60 , 3LP01M , 3LP01S , 5LN01C , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , ATP101 .
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