3LP01C - Даташиты. Аналоги. Основные параметры

Ordering number EN6645B 3LP01C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01C Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 10 V

Ordering number EN6648A 3LP01SS SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01SS Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 10

Ordering number ENN6646 3LP01N P-Channel Silicon MOSFET 3LP01N Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2178 2.5V drive. 5.0 [3LP01N] 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Source 2 Drain 3 Gate Specifications 1.3 1.3 SANYO NP Absolute Maximum Ratings at Ta=25 C Parameter

Ordering number EN6139B 3LP01M SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01M Applications Features Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS 10 V

Ordering number ENN6647 3LP01SP P-Channel Silicon MOSFET 3LP01SP Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2180 2.5V drive. [3LP01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Source 2 Drain 3 Gate Specifications 3.0 3.8nom SANYO SPA Absolute Maximum Ratings at Ta=25 C P

Ordering number EN6681A 3LP01S SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET General-Purpose Switching Device 3LP01S Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS

Spec. No. 794N3 Issued Date 2011.03.14 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01S3 3 @-4V 4.6 @-2.5V RDSON(typ) 10.9 @-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package. Equivalent Circuit Outline MTP3

Spec. No. 794N3 Issued Date 2010.06.17 CYStech Electronics Corp. Revised Date 2014.01.17 Page No. 1/ 9 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01N3 3 @-4V 4.6 @-2.5V RDSON(typ) 10.9 @-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free lead plating and halogen-free package. Equ

Spec. No. 794Y3 Issued Date 2011.12.22 CYStech Electronics Corp. Revised Date Page No. 1/ 8 30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V ID -230mA MTP3LP01Y3 3 @-4V 4.6 @-2.5V RDSON(typ) 10.9 @-1.5V Features Ultra high speed switching. Low gate charge. 2.5V drive. Pb-free package lead plating and halogen-free package. Equiva