5LN01C MOSFET. Datasheet pdf. Equivalent
Type Designator: 5LN01C
Marking Code: YB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.57 nC
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 4.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.8 Ohm
Package: CP
5LN01C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
5LN01C Datasheet (PDF)
5ln01c.pdf
Ordering number : EN6555A5LN01CSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01CApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10
5ln01ss.pdf
Ordering number : EN6560A5LN01SSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SSApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS
5ln01n.pdf
Ordering number : ENN65585LN01NN-Channel Silicon MOSFET5LN01NUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2178 2.5V drive.[5LN01N]5.04.04.00.450.50.440.451 : Source1 2 32 : Drain3 : GateSpecifications1.3 1.3 SANYO : NPAbsolute Maximum Ratings at Ta=25CParameter
5ln01s.pdf
Ordering number : EN6561A5LN01SSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01SApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10
5ln01sp.pdf
Ordering number : ENN65595LN01SPN-Channel Silicon MOSFET5LN01SPUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2180 2.5V drive.[5LN01SP]2.24.00.40.50.40.41 2 31.3 1.31 : Source2 : Drain3 : GateSpecifications3.03.8nomSANYO : SPAAbsolute Maximum Ratings at Ta=25C
5ln01m.pdf
Ordering number : EN6137A5LN01MSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device5LN01MApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 50 VGate-to-Source Voltage VGSS 10
5ln01m.pdf
Ordering number : EN6137C5LN01MN-Channel Small Signal MOSFEThttp://onsemi.com50V, 0.1A, 7.8 , Single MCPFeatures Low ON-resistance Ultrahigh-speed switching 1.5V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 50 VGate to Source Voltage VGSS 10 VDrain Current (DC) ID 0.1 AD
Datasheet: 2SK4222 , 2SK932 , 3LN01C , 3LN01M , 3LN01S , 3LP01C , 3LP01M , 3LP01S , IRFP260N , 5LN01M , 5LN01SP , 5LN01SS , 5LP01M , ATP101 , ATP102 , ATP103 , ATP104 .
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