BMS4007 Datasheet and Replacement
Type Designator: BMS4007
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 540 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO220ML
BMS4007 substitution
BMS4007 Datasheet (PDF)
bms4007.pdf

BMS4007Ordering number : ENA1820SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBMS4007ApplicationsFeatures ON-resistance RDS(on)=6m (typ.) Input capacitance Ciss=9700pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 75 VGa
bms4007.pdf

isc N-Channel MOSFET Transistor BMS4007FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
bms4003.pdf

BMS4003Ordering number : ENA1923SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceBMS4003ApplicationsFeatures ON-resistance RDS(on)=50m (typ.) Input capacitance Ciss=680pF (typ.) 10V driveSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VG
Datasheet: ATP613 , BBS3002 , BFL4001 , BFL4004 , BFL4007 , BFL4026 , BFL4036 , BFL4037 , IRFZ24N , BS107A , BSS123L , BSS138L , BSS84L , CPH3348 , CPH3351 , CPH3355 , CPH3448 .
Keywords - BMS4007 MOSFET datasheet
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