BSS84L MOSFET. Datasheet pdf. Equivalent
Type Designator: BSS84L
Marking Code: PD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
Package: SOT23
BSS84L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSS84L Datasheet (PDF)
bss84l bvss84l.pdf
BSS84L, BVSS84LPower MOSFETSingle P-Channel SOT-23-50 V, 10 W SOT-23 Surface Mount Package Saves Board Spacewww.onsemi.com BV Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableV(BR)DSS RDS(ON) MAX These Devices are Pb-Free and are RoHS Compliant-50 V 10 W @ 10 VMAXIMUM RATINGS (TJ
bss84lt1rev0x.pdf
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bss84lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84LT1/DBSS84LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELField Effect TransistorsENHANCEMENTMODETMOS MOSFET3 DRAIN3121CASE 31808, Style 21GATESOT23 (TO236AB)2 SOURCEMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating
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bss84lt1-d.pdf
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bss84lt1.pdf
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lbss84lt1g s-lbss84lt1g.pdf
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