BSS84L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSS84L
Маркировка: PD
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.225 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 1 ns
Cossⓘ - Выходная емкость: 10 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 10 Ohm
Тип корпуса: SOT23
BSS84L Datasheet (PDF)
bss84l bvss84l.pdf
BSS84L, BVSS84LPower MOSFETSingle P-Channel SOT-23-50 V, 10 W SOT-23 Surface Mount Package Saves Board Spacewww.onsemi.com BV Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableV(BR)DSS RDS(ON) MAX These Devices are Pb-Free and are RoHS Compliant-50 V 10 W @ 10 VMAXIMUM RATINGS (TJ
bss84lt1rev0x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84LT1/DBSS84LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELField Effect TransistorsENHANCEMENTMODETMOS MOSFET3 DRAIN3121CASE 31808, Style 21GATESOT23 (TO236AB)2 SOURCEMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating
bss84lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS84LT1/DBSS84LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELField Effect TransistorsENHANCEMENTMODETMOS MOSFET3 DRAIN3121CASE 31808, Style 21GATESOT23 (TO236AB)2 SOURCEMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Rating
bvss84l sbss84lt1g.pdf
BSS84L, BVSS84LPower MOSFETSingle P-Channel SOT-23-50 V, 10 W SOT-23 Surface Mount Package Saves Board Spacehttp://onsemi.com AEC Q101 Qualified and PPAP Capable - BVSS84L These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted) -50 V 10 W @ 10 VRating Symbol Value UnitP-ChannelDrain-to-Source Voltag
bss84lt1-d.pdf
BSS84LT1Power MOSFET130 mA, 50 VP-Channel SOT-23These miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powerhttp://onsemi.commanagement circuitry. Typical applications are DC-DC converters,load switching, power management in portable and battery-poweredproducts such as computers, printers, cellular and cordless telepho
bss84lt1.pdf
FM120-M WILLASBSS84LT1THRU mAmps, 50 VotsPower MOSFET 130 BARRIER RECTIFIERS -20V- 200VFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimi
lbss84lt1g s-lbss84lt1g.pdf
LBSS84LT1GS-LBSS84LT1GPower MOSFET130 mA, 50V PChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND O
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Список транзисторов
Обновления
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