EC3A04B
MOSFET. Datasheet pdf. Equivalent
Type Designator: EC3A04B
Marking Code: KC
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.18
V
|Id|ⓘ - Maximum Drain Current: 0.01
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 333
Ohm
Package: ECSP1006-3
EC3A04B
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EC3A04B
Datasheet (PDF)
..1. Size:82K sanyo
ec3a04b.pdf
Ordering number : ENA0509B EC3A04BSANYO SemiconductorsDATA SHEETN-Channel Junction Silicon FETLow-Frequency General-Purpose Amplifier,EC3A04BImpedance Converter ApplicationsApplicatins Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications.Features Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization
9.1. Size:30K sanyo
ec3a01b.pdf
Ordering number : ENN6612EC3A01BN-Channel Silicon Junction FETEC3A01BCapacitor Microphone ApplicationsFeaturesPackage Dimensions Ultrasmall (1006 size), thin (0.5mm) leadless package.unit : mm Especially suited for use in audio, telephone capacitor2188microphones.[EC3A01B] Excellent voltage characteristics.0.35 Excellent transient characteristics.0.2
9.2. Size:33K sanyo
ec3a03b.pdf
Ordering number : ENN7295AEC3A03BN-Channel Silicon Junction FETEC3A03BImpedance Converter,Infrared Sensor ApplicationsPreliminaryFeatures Package Dimensions Small IGSS. unit : mm Small Ciss. 2208 Ultraminiature package facilitates miniaturization in[EC3A03B]end products.0.350.20.15 0.150.052130.050.5(Bottom View)1 : Source2 : Drain3 : G
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