All MOSFET. ECH8667 Datasheet

 

ECH8667 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ECH8667
   Marking Code: TN
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: ECH8

 ECH8667 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ECH8667 Datasheet (PDF)

Datasheet: ECH8655R , ECH8657 , ECH8659 , ECH8660 , ECH8661 , ECH8662 , ECH8663R , ECH8664R , IRF840 , ECH8668 , ECH8673 , EFC4618R , EMH1303 , EMH1307 , EMH1405 , EMH2308 , EMH2407 .

 

 
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