EMH1307 Datasheet and Replacement
Type Designator: EMH1307
Marking Code: JG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 13 nC
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 210 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: EMH8
EMH1307 substitution
EMH1307 Datasheet (PDF)
emh1307.pdf

EMH1307Ordering number : ENA1715SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1307ApplicationsFeatures ON-resistance RDS(on)1 : 20m (typ.) Input Capacitance Ciss=1100pF(typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDr
emh1303.pdf

Ordering number : ENA0661EMH1303SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1303ApplicationsFeatures Low ON-resistance. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --
pemh13 pumh13.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPEMH13; PUMH13NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Nov 07 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH13; PUMH13R1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX
Datasheet: ECH8662 , ECH8663R , ECH8664R , ECH8667 , ECH8668 , ECH8673 , EFC4618R , EMH1303 , IRFZ44 , EMH1405 , EMH2308 , EMH2407 , EMH2408 , EMH2409 , EMH2412 , EMH2604 , EMH2801 .
Keywords - EMH1307 MOSFET datasheet
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