EMH1307
MOSFET. Datasheet pdf. Equivalent
Type Designator: EMH1307
Marking Code: JG
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 6.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 55
nS
Cossⓘ -
Output Capacitance: 210
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026
Ohm
Package: EMH8
EMH1307
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EMH1307
Datasheet (PDF)
..1. Size:344K sanyo
emh1307.pdf
EMH1307Ordering number : ENA1715SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1307ApplicationsFeatures ON-resistance RDS(on)1 : 20m (typ.) Input Capacitance Ciss=1100pF(typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDr
8.1. Size:65K sanyo
emh1303.pdf
Ordering number : ENA0661EMH1303SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1303ApplicationsFeatures Low ON-resistance. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --12 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --
9.1. Size:138K philips
pemh13 pumh13.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH13; PUMH13NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Nov 07 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH13; PUMH13R1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX
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