EMH1405 Datasheet and Replacement
Type Designator: EMH1405
Marking Code: KE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 15 nC
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: EMH8
EMH1405 substitution
EMH1405 Datasheet (PDF)
emh1405.pdf

EMH1405Ordering number : ENA1667SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH1405ApplicationsFeatures ON-resistance RDS(on)1=14m (typ) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source
pemh14 pumh14.pdf

PEMH14; PUMH14NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = openRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH14 SOT666 - PEMD14 PEMB14PUMH14 SOT363 SC-88 PUMD14 PUMB141.2 Feature
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IXFN55N50
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History: IXFN55N50



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