EMH2408
MOSFET. Datasheet pdf. Equivalent
Type Designator: EMH2408
Marking Code: LH
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.7
nC
trⓘ - Rise Time: 60
nS
Cossⓘ -
Output Capacitance: 67
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045
Ohm
Package: EMH8
EMH2408
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
EMH2408
Datasheet (PDF)
..1. Size:307K sanyo
emh2408.pdf 
Ordering number : ENA1170 EMH2408SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2408ApplicationsFeatures The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,thereby enabling high-density mounting. 1.8V drive. Halogen free cpmpliance.SpecificationsAbsolute Maximum Ra
8.1. Size:346K sanyo
emh2409.pdf
EMH2409Ordering number : ENA1890SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2409ApplicationsFeatures The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute
8.2. Size:306K sanyo
emh2407.pdf
Ordering number : ENA1141B EMH2407SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2407ApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source
9.1. Size:57K philips
pemh24 pumh24.pdf
PEMH24; PUMH24NPN/NPN resistor-equipped transistors;R1 = 100 k, R2 = 100 kRev. 04 18 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1: Product overviewType number Package NPN/PNP PNP/PNPcomplement complementPhilips JEITAPEMH24 SOT666 - PEMD24 PEMB24PUMH24 SOT363 SC-88 PUMD24 PUMB241.2 Feat
9.2. Size:481K sanyo
emh2412.pdf
EMH2412Ordering number : ENA1315SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2412ApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditio
9.3. Size:270K sanyo
emh2411r.pdf
EMH2411ROrdering number : ENA1421SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2411RApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Condit
9.4. Size:440K onsemi
emh2418r.pdf
Ordering number : ENA2267A EMH2418R N-Channel Power MOSFEThttp://onsemi.com 24V, 9A, 15m, Dual EMH8 Electrical Connection Features N-channel Low On-resistance 2.5V drive8 7 6 5 Common-Drain Type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Spe
9.5. Size:433K onsemi
emh2417r.pdf
Ordering number : ENA2313A EMH2417R N-Channel Power MOSFET http://onsemi.com 12V, 11A, 10m, Dual EMH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings
Datasheet: ECH8668
, ECH8673
, EFC4618R
, EMH1303
, EMH1307
, EMH1405
, EMH2308
, EMH2407
, IRFP260N
, EMH2409
, EMH2412
, EMH2604
, EMH2801
, FW274
, FW282
, FW707
, FW811
.
