Справочник MOSFET. EMH2408

 

EMH2408 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: EMH2408
   Маркировка: LH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 4.7 nC
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 67 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: EMH8

 Аналог (замена) для EMH2408

 

 

EMH2408 Datasheet (PDF)

 ..1. Size:307K  sanyo
emh2408.pdf

EMH2408
EMH2408

Ordering number : ENA1170 EMH2408SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2408ApplicationsFeatures The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,thereby enabling high-density mounting. 1.8V drive. Halogen free cpmpliance.SpecificationsAbsolute Maximum Ra

 8.1. Size:346K  sanyo
emh2409.pdf

EMH2408
EMH2408

EMH2409Ordering number : ENA1890SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2409ApplicationsFeatures The EMH2409 incorporates a N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute

 8.2. Size:306K  sanyo
emh2407.pdf

EMH2408
EMH2408

Ordering number : ENA1141B EMH2407SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2407ApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source

 9.1. Size:57K  philips
pemh24 pumh24.pdf

EMH2408
EMH2408

PEMH24; PUMH24NPN/NPN resistor-equipped transistors;R1 = 100 k, R2 = 100 kRev. 04 18 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1: Product overviewType number Package NPN/PNP PNP/PNPcomplement complementPhilips JEITAPEMH24 SOT666 - PEMD24 PEMB24PUMH24 SOT363 SC-88 PUMD24 PUMB241.2 Feat

 9.2. Size:481K  sanyo
emh2412.pdf

EMH2408
EMH2408

EMH2412Ordering number : ENA1315SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2412ApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditio

 9.3. Size:270K  sanyo
emh2411r.pdf

EMH2408
EMH2408

EMH2411ROrdering number : ENA1421SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceEMH2411RApplicationsFeatures Low ON-resistance. Best suited for LiB charging and discharging switch. Common-drain type. 2.5V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Condit

 9.4. Size:440K  onsemi
emh2418r.pdf

EMH2408
EMH2408

Ordering number : ENA2267A EMH2418R N-Channel Power MOSFEThttp://onsemi.com 24V, 9A, 15m, Dual EMH8 Electrical Connection Features N-channel Low On-resistance 2.5V drive8 7 6 5 Common-Drain Type Protection diode in Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Spe

 9.5. Size:433K  onsemi
emh2417r.pdf

EMH2408
EMH2408

Ordering number : ENA2313A EMH2417R N-Channel Power MOSFET http://onsemi.com 12V, 11A, 10m, Dual EMH8 Common Drain Features Low On-resistance Built-in gate protection resistor 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings

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