FW707 Datasheet and Replacement
Type Designator: FW707
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SOP8
FW707 substitution
FW707 Datasheet (PDF)
fw707.pdf

FW707Ordering number : ENA1805SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceFW707ApplicationsFeatures Composite type with a P-channel MOSFET driving from a 4V supply voltage contained in a single package High-density mountingSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain
Datasheet: EMH2407 , EMH2408 , EMH2409 , EMH2412 , EMH2604 , EMH2801 , FW274 , FW282 , P55NF06 , FW811 , FW812 , FW813 , FW906 , FW907 , J310 , MCH3374 , MCH3377 .
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