MGSF2N02EL MOSFET. Datasheet pdf. Equivalent
Type Designator: MGSF2N02EL
Marking Code: NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.5 nC
trⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT23
MGSF2N02EL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MGSF2N02EL Datasheet (PDF)
mgsf2n02el mvsf2n02el.pdf
MGSF2N02EL,MVSF2N02ELMOSFET N-Channel,SOT-232.8 A, 20 Vwww.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal2.8 A, 20 Vfor use in space sensitive power management circuitry.RDS(on) = 85 mW (max)Features Low RDS(on) Provides Higher Efficiency and Extends Battery LifeN-Channel
mgsf2n02el.pdf
Product specificationMGSF2N02ELPower MOSFET2.8 A, 20 V2.8 Amps, 20 Volts, N-Channel SOT-23RDS(on) = 85 mW (max)These miniature surface mount MOSFETs low RDS(on) assureN-Channelminimal power loss and conserve energy, making these devices idealDfor use in space sensitive power management circuitry.Features Pb-Free Packages are Available Low RDS(on) Provides Higher
mgsf2n02el-d.pdf
MGSF2N02ELPreferred Device Power MOSFET2.8 Amps, 20 Volts, N-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. http://onsemi.comFeatures2.8 A, 20 V Pb-Free Packages are AvailableRDS(on) = 85 mW (max) Low RDS(on) Provides Higher
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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