MGSF2N02EL Specs and Replacement
Type Designator: MGSF2N02EL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 95 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT23
MGSF2N02EL substitution
- MOSFET ⓘ Cross-Reference Search
MGSF2N02EL datasheet
mgsf2n02el mvsf2n02el.pdf
MGSF2N02EL, MVSF2N02EL MOSFET N-Channel, SOT-23 2.8 A, 20 V www.onsemi.com These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal 2.8 A, 20 V for use in space sensitive power management circuitry. RDS(on) = 85 mW (max) Features Low RDS(on) Provides Higher Efficiency and Extends Battery Life N-Channel ... See More ⇒
mgsf2n02el.pdf
Product specification MGSF2N02EL Power MOSFET 2.8 A, 20 V 2.8 Amps, 20 Volts, N-Channel SOT-23 RDS(on) = 85 mW (max) These miniature surface mount MOSFETs low RDS(on) assure N-Channel minimal power loss and conserve energy, making these devices ideal D for use in space sensitive power management circuitry. Features Pb-Free Packages are Available Low RDS(on) Provides Higher ... See More ⇒
mgsf2n02el-d.pdf
MGSF2N02EL Preferred Device Power MOSFET 2.8 Amps, 20 Volts, N-Channel SOT-23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. http //onsemi.com Features 2.8 A, 20 V Pb-Free Packages are Available RDS(on) = 85 mW (max) Low RDS(on) Provides Higher ... See More ⇒
Detailed specifications: MCH6444 , MCH6445 , MCH6601 , MCH6602 , MCH6604 , MCH6613 , MGSF1N02L , MGSF1N03L , AON7506 , MLD1N06CL , MMBF0201NL , MMBF170L , MMBF2201N , MMBF4391L , MMBF4392L , MMBF4393L , MMBFJ175L .
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