All MOSFET. MGSF2N02EL Datasheet

 

MGSF2N02EL Datasheet and Replacement


   Type Designator: MGSF2N02EL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT23
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MGSF2N02EL Datasheet (PDF)

 ..1. Size:118K  onsemi
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MGSF2N02EL

MGSF2N02EL,MVSF2N02ELMOSFET N-Channel,SOT-232.8 A, 20 Vwww.onsemi.comThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices ideal2.8 A, 20 Vfor use in space sensitive power management circuitry.RDS(on) = 85 mW (max)Features Low RDS(on) Provides Higher Efficiency and Extends Battery LifeN-Channel

 ..2. Size:89K  tysemi
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MGSF2N02EL

Product specificationMGSF2N02ELPower MOSFET2.8 A, 20 V2.8 Amps, 20 Volts, N-Channel SOT-23RDS(on) = 85 mW (max)These miniature surface mount MOSFETs low RDS(on) assureN-Channelminimal power loss and conserve energy, making these devices idealDfor use in space sensitive power management circuitry.Features Pb-Free Packages are Available Low RDS(on) Provides Higher

 0.1. Size:54K  onsemi
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MGSF2N02EL

MGSF2N02ELPreferred Device Power MOSFET2.8 Amps, 20 Volts, N-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. http://onsemi.comFeatures2.8 A, 20 V Pb-Free Packages are AvailableRDS(on) = 85 mW (max) Low RDS(on) Provides Higher

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